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Investigation of drain disturb in SONOS flash EEPROMs

DSpace at IIT Bombay

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Title Investigation of drain disturb in SONOS flash EEPROMs
 
Creator BHARATH KUMAR, P
SHARMA, RAVINDER
NAIR, PR
MAHAPATRA, S
 
Subject electron tunneling
semiconductor doping
impact ionisation
leakage currents
hole traps
electrons
 
Description The mechanism of drain disturb is studied in silicon-oxide-nitride-oxide-silicon Flash electrically erasable programmable read-only memory cells. It is shown that disturb is a serious problem in programmed cells and is caused by injection of hot holes from substrate into the oxide/nitride/oxide stack. The origin of these holes is identified by analyzing the influence of halo doping, channel doping, and channel length scaling on drain disturb. Band-to-band tunneling at the drain junction is normally the dominant source of these holes. It is also shown that holes generated out of impact ionization of channel electrons become dominant in cells with high channel leakage (especially at lower channel lengths). Finally, the effect of repeated program/erase cycling on drain disturb is studied. Drain disturb becomes less severe with cycling, the reasons for which are determined using gate-induced drain leakage measurements and device simulations.
 
Publisher IEEE
 
Date 2009-01-11T06:39:09Z
2011-11-25T16:26:19Z
2011-12-26T13:08:46Z
2011-12-27T05:34:06Z
2009-01-11T06:39:09Z
2011-11-25T16:26:19Z
2011-12-26T13:08:46Z
2011-12-27T05:34:06Z
2007
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 54 (1), 98-105
0018-9383
http://dx.doi.org/10.1109/TED.2006.887232
http://hdl.handle.net/10054/549
http://dspace.library.iitb.ac.in/xmlui/handle/10054/549
 
Language en