Record Details

A two-dimensional numerical simulation of oxide charge buildup in MOS transistors due to radiation

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title A two-dimensional numerical simulation of oxide charge buildup in MOS transistors due to radiation
 
Creator VASUDEVAN, VINITA
VASI, J
 
Subject electron traps
insulated gate field effect transistors
insulating thin films
radiation effects
semiconductor device models
 
Description The authors have developed a time-dependent two-dimensional simulator in order to simulate charge trapping in silicon dioxide due to radiation. The Poisson and continuity equations are solved both in the oxide and the semiconductor. In addition, in order to simulate charge trapping, trap rate equations using first-order trapping kinetics are solved in the oxide. This paper contains the numerical methods used in the simulation and results obtained using this simulator. One of the main results of this simulation is the presence of a lateral variation in the radiation-induced oxide charge in an MOS transistor irradiated with a drain bias.
 
Publisher IEEE
 
Date 2008-11-24T05:32:46Z
2011-11-25T12:49:49Z
2011-12-26T13:08:53Z
2011-12-27T05:34:16Z
2008-11-24T05:32:46Z
2011-11-25T12:49:49Z
2011-12-26T13:08:53Z
2011-12-27T05:34:16Z
1994
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 41(3), 383-390
0018-9383
http://dx.doi.org/10.1109/16.275224
http://hdl.handle.net/10054/111
http://dspace.library.iitb.ac.in/xmlui/handle/10054/111
 
Language en_US