Record Details

NBTI degradation and its impact for analog circuit reliability

DSpace at IIT Bombay

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Field Value
 
Title NBTI degradation and its impact for analog circuit reliability
 
Creator RAMGOPAL RAO, V
JHA, NEERAJ K
REDDY, PS
SHARMA, DK
 
Subject cmos integrated circuit
comparator circuit
operational amplifiers
mosfet devices
 
Description A methodology to quantify the degradation at circuit level due to negative bias temperature instability (NBTI) has been proposed in this work. Using this approach, a variety of analog/mixed-signal circuits are simulated, and their degradation is analyzed. It has been shown that the degradation in circuit performance is mainly dependent on the circuit configuration and its application rather than the absolute value of degradation at the device level. In circuits such as digital-to-analog converters, NBTI can pose a serious reliability concern, as even a small variation in bias currents can cause significant gain errors.
 
Publisher IEEE
 
Date 2008-11-26T06:39:38Z
2011-11-25T12:50:49Z
2011-12-26T13:08:54Z
2011-12-27T05:34:17Z
2008-11-26T06:39:38Z
2011-11-25T12:50:49Z
2011-12-26T13:08:54Z
2011-12-27T05:34:17Z
2005
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 52(12), 2609-15
0018-9383
http://dx.doi.org/10.1109/TED.2005.859570
http://hdl.handle.net/10054/153
http://dspace.library.iitb.ac.in/xmlui/handle/10054/153
 
Language en_US