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Modeling of the CoolMOSTM transistor - Part II: DC model and parameter extraction

DSpace at IIT Bombay

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Title Modeling of the CoolMOSTM transistor - Part II: DC model and parameter extraction
 
Creator PATIL, MB
DANIEL, BJ
PARIKH, CD
 
Subject spice
parameter estimation
power mosfet
semiconductor device models
 
Description An accurate dc model for the CoolMOSTM power transistor is presented. An elementary model consisting of an intrinsic MOSFET and a JFET to represent the drift region, is first discussed and it is pointed out that this is a rather poor model, needing improvements. Using device simulation results, it is shown that, by replacing the gate and drain voltages of the intrinsic MOSFET by appropriate "effective" voltages, a highly accurate model is obtained. A systematic procedure for parameter extraction is described and an implementation of the new model in the form of a SPICE subcircuit is given.
 
Publisher IEEE
 
Date 2008-11-25T10:54:30Z
2011-11-25T12:56:20Z
2011-12-26T13:08:54Z
2011-12-27T05:34:17Z
2008-11-25T10:54:30Z
2011-11-25T12:56:20Z
2011-12-26T13:08:54Z
2011-12-27T05:34:17Z
2002
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 49(5), 923-29
0018-9383
http://dx.doi.org/10.1109/16.998604
http://hdl.handle.net/10054/142
http://dspace.library.iitb.ac.in/xmlui/handle/10054/142
 
Language en_US