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Bias and temperature dependent charge transport in high mobility cobalt-phthalocyanine thin films

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Title Bias and temperature dependent charge transport in high mobility cobalt-phthalocyanine thin films
 
Creator SAMANTA, S
ASWAL, DK
SINGH, A
DEBNATH, AK
KUMAR, MS
HAYAKAWA, Y
GUPTA, SK
YAKHMI, JV
 
Subject transistors
interface
carrier mobility
electrical conductivity
lanthanum compounds
organic semiconductors
semiconductor thin films
space charge
 
Description The temperature dependent current-voltage (J-V) characteristics of highly-oriented cobalt phthalocyanine films (rocking-curve width=0.11 degrees) deposited on (001) LaAlO(3) substrates are investigated. In the temperature range 300-100 K, charge transport is governed by bulk-limited processes with a bias dependent crossover from Ohmic (J similar to V) to trap-free space-charge-limited conduction (J similar to V(2)). The mobility (mu) at 300 K has a value of similar to 7 cm(2) V(-1) s(-1) and obeys Arrhenius-type (ln mu similar to 1/T) behavior. However, at temperatures < 100 K, the charge transport is electrode-limited, which undergoes a bias dependent transition from Schottky (ln J similar to V(1/2)) to multistep-tunneling (conductivity varying exponentially on the inverse of the square-root of electric field).
 
Publisher AMER INST PHYSICS
 
Date 2011-07-15T13:11:54Z
2011-12-26T12:49:30Z
2011-12-27T05:34:21Z
2011-07-15T13:11:54Z
2011-12-26T12:49:30Z
2011-12-27T05:34:21Z
2010
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 96(1), -
0003-6951
http://dx.doi.org/10.1063/1.3284652
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4286
http://hdl.handle.net/10054/4286
 
Language en