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Change in the microstructure at W/Si interface and surface by swift heavy ions

DSpace at IIT Bombay

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Title Change in the microstructure at W/Si interface and surface by swift heavy ions
 
Creator AGARWAL, G
KULSHRESTHA, V
SHARMA, P
JAIN, IP
 
Subject irradiation
films
multilayers
silicon
thin films
vacuum deposition
rbs
irradiation effects
 
Description Metal/Si thin film interfaces and surfaces can be modified by swift heavy ions (SHI) in a controlled manner. The mixing induced by 120 MeV Au(+9) ions at W/Si interface are presented in the manuscript. Grazing Incident X-ray Diffraction (GIXRD) result shows the formation of two type of tungsten silicides t-W(5)Si(3) along with t-WSi(2) by atomic mixing at the interface on increasing the ion fluence. The diffusivity value calculated from the Rutherford Backscattering Spectroscopy (RBS) measurements, suggest a transient molten phase at the interface causing the atomic mixing following by Thermal spike model. Atomic Force Microscopy (AFM) results revealed increase in surface roughness and grain size formation, which increases with ion fluence showing the irradiation effect at the surface also.
 
Publisher ACADEMIC PRESS INC ELSEVIER SCIENCE
 
Date 2011-07-12T14:32:54Z
2011-12-26T12:48:56Z
2011-12-27T05:34:27Z
2011-07-12T14:32:54Z
2011-12-26T12:48:56Z
2011-12-27T05:34:27Z
2010
 
Type Article
 
Identifier JOURNAL OF COLLOID AND INTERFACE SCIENCE, 351(2), 570-575
0021-9797
http://dx.doi.org/10.1016/j.jcis.2010.07.055
http://dspace.library.iitb.ac.in/xmlui/handle/10054/3352
http://hdl.handle.net/10054/3352
 
Language en