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DEGRADATION OF OXIDES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS UNDER HIGH-FIELD STRESS

DSpace at IIT Bombay

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Field Value
 
Title DEGRADATION OF OXIDES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS UNDER HIGH-FIELD STRESS
 
Creator PATRIKAR, RM
LAL, R
VASI, J
 
Subject dielectric-breakdown
mos devices
electrical breakdown
intrinsic breakdown
generation
sio2
 
Description High-field effects in metal-oxide-semiconductor capacitors have been studied in detail. A comprehensive set of experiments, stressing identically fabricated capacitors on both P-type and N-type silicon, both in accumulation and in inversion, has been made to study defect generation in the oxide at high fields. There is clear experimental evidence that both bulk hole and electron traps are generated under all stress conditions. High-field prebreakdown properties depend mainly upon the dynamics of generation of traps, trapping and detrapping at these and in previously existing traps. It has been found that of several processes, some dominate, depending upon the type of silicon and polarity during stressing, and this is also true for the final breakdown mechanism. In this paper the dominant mechanisms are identified for each of the field stress conditions that have been studied.
 
Publisher AMER INST PHYSICS
 
Date 2011-07-15T14:46:01Z
2011-12-26T12:49:32Z
2011-12-27T05:34:38Z
2011-07-15T14:46:01Z
2011-12-26T12:49:32Z
2011-12-27T05:34:38Z
1993
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 74(7), 4598-4607
0021-8979
http://dx.doi.org/10.1063/1.354378
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4306
http://hdl.handle.net/10054/4306
 
Language en