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DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRIC-FIELD

DSpace at IIT Bombay

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Title DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRIC-FIELD
 
Creator TALWALKAR, N
DAS, A
VASI, J
 
Subject interface trap formation
devices
 
Description We have presented in this paper a semi-numerical simulation of dispersive transport under one-dimensional nonuniform electric field which could be used to study dispersive transport of carriers in the oxide. Our simulation is based on continuous time random walk principles (CTRW). Previous formulations using CTRW were derived under the assumption of uniform electric field. Comparison of our simulation results with the equivalent uniform field case shows that the treatment of nonuniform electric field is necessary to correctly predict events linked to dispersive transport, such as the growth of trapped oxide charge due to hole trapping or interface states due to H+ ions reaching oxide semiconductor interface of metal-oxide-semiconductor devices. (C) 1995
 
Publisher AMER INST PHYSICS
 
Date 2011-07-15T15:22:32Z
2011-12-26T12:49:34Z
2011-12-27T05:34:42Z
2011-07-15T15:22:32Z
2011-12-26T12:49:34Z
2011-12-27T05:34:42Z
1995
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 78(7), 4487-4489
0021-8979
http://dx.doi.org/10.1063/1.359859
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4315
http://hdl.handle.net/10054/4315
 
Language en