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Investigation of 70 MeV iron irradiation induced defects in C-silicon

DSpace at IIT Bombay

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Title Investigation of 70 MeV iron irradiation induced defects in C-silicon
 
Creator KAMALAPURKAR, BA
DUBEY, SK
YADAV, AD
BHOLE, KG
CHANDRASHEKARAN, KS
RAO, TKG
MOHANTI, T
KANJILAL, D
 
Subject ion-implantation
behavior
high energy irradiation
iron
silicon
defects
high resolution xrd
esr
 
Description Single crystal p-type silicon wafers of 0.05 Omegacm resistivity and orientation were irradiated with 70 MeV Fe-56 ions at fluence levels varying from 5 x 10(12) to 5 x 10(14) ions cm(-2). The high-resolution X-ray diffraction (XRD) and electron spin resonance (ESR) measurements were carried out to investigate the defect levels. From XRD studies it is found that the radiation induced defect density increases with increasing fluence up to 5 x 10(13) ions cm(-2) and thereafter it saturates. The screw dislocation density was found to change from 1.59 x 10(6) to 1.93 x 10(8) cm(-2) with increasing ion fluence. The strain induced in irradiated samples varied from 5.2 x 10(-4) to 9 x 10(-5) Nm(-2) with increasing ion fluence. ESR study indicates the presence of different types of defect centers. The dominant signal obtained at g value 2.0063 is attributed to the dangling bond states of silicon. (C) 2003
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-07-25T08:49:52Z
2011-12-26T12:50:25Z
2011-12-27T05:34:50Z
2011-07-25T08:49:52Z
2011-12-26T12:50:25Z
2011-12-27T05:34:50Z
2003
 
Type Article
 
Identifier NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 211(3), 383-388
0168-583X
http://dx.doi.org/10.1016/S0168-583X(03)01391-0
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6693
http://hdl.handle.net/10054/6693
 
Language en