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Fabrication of silicon quantum dots in SiN(x) multilayer using hot-wire CVD

DSpace at IIT Bombay

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Title Fabrication of silicon quantum dots in SiN(x) multilayer using hot-wire CVD
 
Creator PANCHAL, AK
SOLANKI, CS
 
Subject chemical-vapor-deposition
nanocrystalline-silicon
optical-properties
nitride films
matrix
growth
nanoparticles
confinement
si3n4
sio2
raman spectra
sims
tem
a-si/sinx multilayer
hwcvd
 
Description A hot-wire chemical vapor deposition (HWCVD) procedure for growing 40 alternating layers of Silicon quantum dots (Si-QD) and SiN(x) in a single silicon nitride deposition chamber is presented in this paper. Films of 140-160 nm thickness were deposited with a substrate temperature of 250 degrees C and post-annealed between 800 and 950 degrees C. Transmission electron microscopy (TEM), secondary ion mass spectroscopy (SIMS) and Raman analysis techniques were used to characterize the samples. The cross-sectional TEM analysis confirms the formation of Si-QD in the range 3-5 nm with a density of 5 x 10(12)/cm(2) in the Si-QD/SiN(x) multilayer. The SIMS measurements indicate the variation in Si and N content as the alternating layers of Si and SiN(x) grow on the c-Si substrate. Deconvolution of the first order Raman spectra shows the presence of a lower frequency peak in the range 517-518 cm(-1) corresponding to Si-QD annealed with an increase in the temperature. The intensity ratio at the center frequency of the second order Raman spectrum increases from 0.52 to 0.88 with an increase in the Si-QD size and the annealing temperature. (C) 2009
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-07-25T01:51:12Z
2011-12-26T12:49:10Z
2011-12-27T05:34:56Z
2011-07-25T01:51:12Z
2011-12-26T12:49:10Z
2011-12-27T05:34:56Z
2009
 
Type Article
 
Identifier JOURNAL OF CRYSTAL GROWTH, 311(9), 2659-2663
0022-0248
http://dx.doi.org/10.1016/j.jcrysgro.2009.03.013
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6599
http://hdl.handle.net/10054/6599
 
Language en