Hexagonal diamond synthesis on h-GaN strained films
DSpace at IIT Bombay
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Title |
Hexagonal diamond synthesis on h-GaN strained films
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Creator |
MISRA, A
TYAGI, PK YADAV, BS RAI, P MISRA, DS PANCHOLI, V SAMAJDAR, ID |
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Subject |
x-ray-diffraction
raman-spectroscopy phase-transformation graphite carbon temperature stress |
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Description |
Chemical vapor deposited diamond films grown on strained gallium nitride-coated quartz substrate are found to display a dominantly hexagonal diamond phase. The phase identification is done using Raman spectroscopy and orientation imaging microscopy (OIM). The presence of a 1324.4 cm(-1) band in the Raman spectra is attributed to a hexagonal diamond symmetry, but the unambiguous signature of the hexagonal phase is confirmed by OIM. A phase map of the sample clearly shows that 88% of the scanned sample area is hexagonal diamond. (c) 2006
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Publisher |
AMER INST PHYSICS
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Date |
2011-07-15T19:19:56Z
2011-12-26T12:49:38Z 2011-12-27T05:35:06Z 2011-07-15T19:19:56Z 2011-12-26T12:49:38Z 2011-12-27T05:35:06Z 2006 |
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Type |
Article
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Identifier |
APPLIED PHYSICS LETTERS, 89(7), -
0003-6951 http://dx.doi.org/10.1063/1.2218043 http://dspace.library.iitb.ac.in/xmlui/handle/10054/4352 http://hdl.handle.net/10054/4352 |
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Language |
en
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