HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSION
DSpace at IIT Bombay
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Title |
HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSION
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Creator |
PATRIKAR, RM
LAL, R VASI, J |
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Subject |
generation
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Description |
Degradation of the gate oxide is often studied by stressing of metal-oxide-semiconductor (MOS) capacitors. Usually the MOS capacitor is stressed in accumulation to avoid the complications due to a voltage drop across the depletion layer if stressed in inversion. High field stressing studies for MOS capacitors with the silicon in inversion are presented in this article. Our observations show that in this mode, silicon properties (mainly minority 'carrier generation lifetime) play an important role.
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Publisher |
AMER INST PHYSICS
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Date |
2011-07-16T06:58:04Z
2011-12-26T12:49:38Z 2011-12-27T05:35:10Z 2011-07-16T06:58:04Z 2011-12-26T12:49:38Z 2011-12-27T05:35:10Z 1993 |
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Type |
Article
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Identifier |
JOURNAL OF APPLIED PHYSICS, 73(8), 3857-3859
0021-8979 http://dx.doi.org/10.1063/1.352896 http://dspace.library.iitb.ac.in/xmlui/handle/10054/4356 http://hdl.handle.net/10054/4356 |
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Language |
en
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