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HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSION

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Title HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSION
 
Creator PATRIKAR, RM
LAL, R
VASI, J
 
Subject generation
 
Description Degradation of the gate oxide is often studied by stressing of metal-oxide-semiconductor (MOS) capacitors. Usually the MOS capacitor is stressed in accumulation to avoid the complications due to a voltage drop across the depletion layer if stressed in inversion. High field stressing studies for MOS capacitors with the silicon in inversion are presented in this article. Our observations show that in this mode, silicon properties (mainly minority 'carrier generation lifetime) play an important role.
 
Publisher AMER INST PHYSICS
 
Date 2011-07-16T06:58:04Z
2011-12-26T12:49:38Z
2011-12-27T05:35:10Z
2011-07-16T06:58:04Z
2011-12-26T12:49:38Z
2011-12-27T05:35:10Z
1993
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 73(8), 3857-3859
0021-8979
http://dx.doi.org/10.1063/1.352896
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4356
http://hdl.handle.net/10054/4356
 
Language en