HYDROGENATED MICROCRYSTALLINE SILICON FILMS PRODUCED AT LOW-TEMPERATURE BY THE HOT-WIRE DEPOSITION METHOD
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
HYDROGENATED MICROCRYSTALLINE SILICON FILMS PRODUCED AT LOW-TEMPERATURE BY THE HOT-WIRE DEPOSITION METHOD
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Creator |
DUSANE, RO
DUSANE, SR BHIDE, VG KSHIRSAGAR, ST |
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Subject |
chemical vapor-deposition
amorphous-silicon thin-films quality |
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Description |
In this letter we report the synthesis of hydrogenated microcrystalline silicon at low temperature and without hydrogen dilution of the silane gas by the hot wire method. These films are characterized by higher dark conductivity and larger band gap compared to hydrogenated amorphous silicon. Microcrystallinity in these films is clearly established from the sharp crystalline TO-like peak in the first-order Raman spectra. The crystallite size and its volume fraction show a critical dependence on the silane flow rate.
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Publisher |
AMER INST PHYSICS
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Date |
2011-07-16T07:19:08Z
2011-12-26T12:49:38Z 2011-12-27T05:35:12Z 2011-07-16T07:19:08Z 2011-12-26T12:49:38Z 2011-12-27T05:35:12Z 1993 |
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Type |
Article
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Identifier |
APPLIED PHYSICS LETTERS, 63(16), 2201-2203
0003-6951 http://dx.doi.org/10.1063/1.110801 http://dspace.library.iitb.ac.in/xmlui/handle/10054/4360 http://hdl.handle.net/10054/4360 |
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Language |
en
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