LARGE CRITICAL CURRENTS AND IMPROVED EPITAXY OF LASER-ABLATED AG-DOPED YBA2CU3O7-DELTA THIN-FILMS
DSpace at IIT Bombay
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Title |
LARGE CRITICAL CURRENTS AND IMPROVED EPITAXY OF LASER-ABLATED AG-DOPED YBA2CU3O7-DELTA THIN-FILMS
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Creator |
KUMAR, D
SHARON, M PINTO, R APTE, PR PAI, SP PURANDARE, SC GUPTA, LC VIJAYARAGHAVAN, R |
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Subject |
critical current-density
grain-boundaries transport |
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Description |
Microstructure and critical current densities of laser ablated YBa2Cu3O7-delta thin films doped with 2-20 wt. % Ag have been studied. A critical current density as high as 1.4 X 10(7) A cm-2 at 77 K has been realized on [100] SrTiO3 substrates with YBaCuO films doped with 5 wt. % Ag which has been found to be the optimum. Evidence indicates that the improved microstructure and epitaxy which is a consequence of grain enlargement and alignment caused by Ag is responsible for the high values of critical currents observed.
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Publisher |
AMER INST PHYSICS
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Date |
2011-07-16T08:37:48Z
2011-12-26T12:49:40Z 2011-12-27T05:35:15Z 2011-07-16T08:37:48Z 2011-12-26T12:49:40Z 2011-12-27T05:35:15Z 1993 |
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Type |
Article
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Identifier |
APPLIED PHYSICS LETTERS, 62(26), 3522-3524
0003-6951 http://dx.doi.org/10.1063/1.109014 http://dspace.library.iitb.ac.in/xmlui/handle/10054/4378 http://hdl.handle.net/10054/4378 |
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Language |
en
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