Investigation of defects in reactive ion-implanted silicon
DSpace at IIT Bombay
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Title |
Investigation of defects in reactive ion-implanted silicon
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Creator |
BHATT, G
YADAV, AD DUBEY, SK RAO, TKG |
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Subject |
electron-spin-resonance
amorphous-silicon oxynitride films layers si silicon esr rta ion-implantation oxide nitride oxynitride |
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Description |
The reactive ion implantation in silicon at different fluence levels varying from 5 x 10(16) to 1 x 10(18) ions cm(-2) was carried out at 30 keV to synthesize silicon dioxide (SiO2), silicon nitride (Si3N4) and silicon oxynitride (SixOyNz) layers at room temperature. The electron spin resonance (ESR) measurements were performed on these samples to study the defects. The rapid thermal annealing (RTA) behaviour of defects in nitrogen ambient was also studied. The room temperature ESR studies show a defect center related to silicon dangling bonds at g similar to 2.0040-2.0051. This defect center almost disappears after RTA at 1073 K for 5 min. The spin density is found to depend strongly on the ion-fluence. The low temperature studies indicate the presence of an additional center associated with interface defects at g similar to 1.999 for low fluence implanted samples. However, this defect center was not observed for samples implanted with high fluence levels (greater than or equal to 5 x 10(17) ions cm(-2)). (C) 2004
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Publisher |
ELSEVIER SCIENCE BV
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Date |
2011-07-25T09:02:31Z
2011-12-26T12:50:28Z 2011-12-27T05:35:16Z 2011-07-25T09:02:31Z 2011-12-26T12:50:28Z 2011-12-27T05:35:16Z 2004 |
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Type |
Article
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Identifier |
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 222(1-2), 75-80
0168-583X http://dx.doi.org/10.1016/j.nimb.2003.12.092 http://dspace.library.iitb.ac.in/xmlui/handle/10054/6695 http://hdl.handle.net/10054/6695 |
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Language |
en
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