Record Details

Investigation of defects in reactive ion-implanted silicon

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Investigation of defects in reactive ion-implanted silicon
 
Creator BHATT, G
YADAV, AD
DUBEY, SK
RAO, TKG
 
Subject electron-spin-resonance
amorphous-silicon
oxynitride films
layers
si
silicon
esr
rta
ion-implantation oxide
nitride
oxynitride
 
Description The reactive ion implantation in silicon at different fluence levels varying from 5 x 10(16) to 1 x 10(18) ions cm(-2) was carried out at 30 keV to synthesize silicon dioxide (SiO2), silicon nitride (Si3N4) and silicon oxynitride (SixOyNz) layers at room temperature. The electron spin resonance (ESR) measurements were performed on these samples to study the defects. The rapid thermal annealing (RTA) behaviour of defects in nitrogen ambient was also studied. The room temperature ESR studies show a defect center related to silicon dangling bonds at g similar to 2.0040-2.0051. This defect center almost disappears after RTA at 1073 K for 5 min. The spin density is found to depend strongly on the ion-fluence. The low temperature studies indicate the presence of an additional center associated with interface defects at g similar to 1.999 for low fluence implanted samples. However, this defect center was not observed for samples implanted with high fluence levels (greater than or equal to 5 x 10(17) ions cm(-2)). (C) 2004
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-07-25T09:02:31Z
2011-12-26T12:50:28Z
2011-12-27T05:35:16Z
2011-07-25T09:02:31Z
2011-12-26T12:50:28Z
2011-12-27T05:35:16Z
2004
 
Type Article
 
Identifier NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 222(1-2), 75-80
0168-583X
http://dx.doi.org/10.1016/j.nimb.2003.12.092
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6695
http://hdl.handle.net/10054/6695
 
Language en