Record Details

Nanocrystalline gallium nitride thin films

DSpace at IIT Bombay

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Field Value
 
Title Nanocrystalline gallium nitride thin films
 
Creator PRESCHILLA, N
MAJOR, S
KUMAR, N
SAMAJDAR, I
SRINIVASA, RS
 
Subject gan quantum dots
route
blue
 
Description Nanocrystalline gallium nitride (GaN) thin films were deposited on quartz substrates by reactive rf sputtering of GaAs target with nitrogen as the reactive cum sputtering gas. X-ray diffraction and transmission electron microscopy confirmed the presence of GaN crystallites with particle size increasing from 3 to 16 nm, as the substrate temperature was increased from 400 to 550 degrees C. The particle size in films grown at temperatures below 550 degrees C were less than the exciton Bohr radius of GaN. The band gap of these films obtained from absorption and photoluminescence measurements showed a blueshift with respect to bulk GaN. (C) 2000 [S0003-6951(00)03138-7].
 
Publisher AMER INST PHYSICS
 
Date 2011-07-16T09:52:16Z
2011-12-26T12:49:42Z
2011-12-27T05:35:18Z
2011-07-16T09:52:16Z
2011-12-26T12:49:42Z
2011-12-27T05:35:18Z
2000
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 77(12), 1861-1863
0003-6951
http://dx.doi.org/10.1063/1.1311595
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4395
http://hdl.handle.net/10054/4395
 
Language en