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Noise mediated regularity of porous silicon nanostructures

DSpace at IIT Bombay

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Field Value
 
Title Noise mediated regularity of porous silicon nanostructures
 
Creator ESCORCIA-GARCIA, J
AGARWAL, V
PARMANANDA, P
 
Subject stochastic resonance
coherence resonance
mechanism
systems
electrokinetic effects
elemental semiconductors
etching
nanoporous materials
noise
porous semiconductors
silicon
 
Description Interaction of noise with nonlinear electrochemical kinetics involving the etching of porous silicon is studied experimentally. It is realized that by monotonically increasing the level of internal noise, one can tune the regularity of the spatial distribution of pores in silicon nanostructures. This regularity of the noise provoked structures is quantified using a spatial normalized variance technique in conjunction with the calculation of Hurst exponents. Our experimental results indicate the emergence of intrinsic coherence resonance. Consequently, there exists an optimal value of internal noise for which the spatial distribution of nanopores attain maximal regularity. This regularity of the pores can be useful for enhancing the optical response of porous silicon based devices.
 
Publisher AMER INST PHYSICS
 
Date 2011-07-16T10:03:31Z
2011-12-26T12:49:42Z
2011-12-27T05:35:19Z
2011-07-16T10:03:31Z
2011-12-26T12:49:42Z
2011-12-27T05:35:19Z
2009
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 94(13), -
0003-6951
http://dx.doi.org/10.1063/1.3104854
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4397
http://hdl.handle.net/10054/4397
 
Language en