PROCESS DEPENDENCE OF BREAKDOWN FIELD IN THERMALLY NITRIDED SILICON DIOXIDE
DSpace at IIT Bombay
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Title |
PROCESS DEPENDENCE OF BREAKDOWN FIELD IN THERMALLY NITRIDED SILICON DIOXIDE
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Creator |
RAMESH, K
CHANDORKAR, AN VASI, J |
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Subject |
dielectric-breakdown
sio2-films films sio2 nitridation nitroxide gate |
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Description |
We have studied the dependence of breakdown field in nitrided oxides on nitridation conditions. Nitridation improves the breakdown field of the oxides. In an attempt to explore the cause of the improved breakdown, the breakdown field was related with electron-trap density and refractive index (which increases with nitrogen concentration in the oxide). Our results suggest that the enhanced breakdown field of nitrided oxides is mainly due to incorporation of nitrogen, which results in structural changes in the nitrided oxide.
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Publisher |
AMER INST PHYSICS
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Date |
2011-07-16T12:32:26Z
2011-12-26T12:49:46Z 2011-12-27T05:35:27Z 2011-07-16T12:32:26Z 2011-12-26T12:49:46Z 2011-12-27T05:35:27Z 1991 |
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Type |
Article
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Identifier |
JOURNAL OF APPLIED PHYSICS, 70(4), 2299-2303
0021-8979 http://dx.doi.org/10.1063/1.349423 http://dspace.library.iitb.ac.in/xmlui/handle/10054/4427 http://hdl.handle.net/10054/4427 |
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Language |
en
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