Record Details

PROCESS DEPENDENCE OF BREAKDOWN FIELD IN THERMALLY NITRIDED SILICON DIOXIDE

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Field Value
 
Title PROCESS DEPENDENCE OF BREAKDOWN FIELD IN THERMALLY NITRIDED SILICON DIOXIDE
 
Creator RAMESH, K
CHANDORKAR, AN
VASI, J
 
Subject dielectric-breakdown
sio2-films
films
sio2
nitridation
nitroxide
gate
 
Description We have studied the dependence of breakdown field in nitrided oxides on nitridation conditions. Nitridation improves the breakdown field of the oxides. In an attempt to explore the cause of the improved breakdown, the breakdown field was related with electron-trap density and refractive index (which increases with nitrogen concentration in the oxide). Our results suggest that the enhanced breakdown field of nitrided oxides is mainly due to incorporation of nitrogen, which results in structural changes in the nitrided oxide.
 
Publisher AMER INST PHYSICS
 
Date 2011-07-16T12:32:26Z
2011-12-26T12:49:46Z
2011-12-27T05:35:27Z
2011-07-16T12:32:26Z
2011-12-26T12:49:46Z
2011-12-27T05:35:27Z
1991
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 70(4), 2299-2303
0021-8979
http://dx.doi.org/10.1063/1.349423
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4427
http://hdl.handle.net/10054/4427
 
Language en