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RADIATION-INDUCED INTERFACE-STATE GENERATION IN REOXIDIZED NITRIDED SIO2

DSpace at IIT Bombay

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Field Value
 
Title RADIATION-INDUCED INTERFACE-STATE GENERATION IN REOXIDIZED NITRIDED SIO2
 
Creator RAO, VR
VASI, J
 
Subject charge-trapping properties
silicon dioxide
gate dielectrics
oxides
nitridation
kinetics
 
Description Reoxidized nitrided oxide is compared with nitrided oxides and dry SiO2 for radiation-induced interface-state generation (DELTA-D(itm)) and midgap voltage shifts (DELTA-V(mg)). The suppression of DELTA-D(itm) observed with heavy nitridation or reoxidation is explained in terms of the trapped-hole recombination model together with the shifting of the location of the trapped positive charge away from the Si interface. This model can also explain the effect of nitrogen annealing on nitrided oxides.
 
Publisher AMER INST PHYSICS
 
Date 2011-07-16T13:08:57Z
2011-12-26T12:49:46Z
2011-12-27T05:35:28Z
2011-07-16T13:08:57Z
2011-12-26T12:49:46Z
2011-12-27T05:35:28Z
1992
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 71(2), 1029-1031
0021-8979
http://dx.doi.org/10.1063/1.350390
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4434
http://hdl.handle.net/10054/4434
 
Language en