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Investigation of semiconducting parameters of Pb-Sn alloy oxide-electrolyte interface by Butler Gartner model

DSpace at IIT Bombay

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Field Value
 
Title Investigation of semiconducting parameters of Pb-Sn alloy oxide-electrolyte interface by Butler Gartner model
 
Creator MUKHOPADHYAY, I
SHARON, M
 
Subject alkaline-solution
sulfuric-acid
lead-oxide
tin
photoelectrochemical cells
gartner model
oxide thin film
lead oxide photoanode
doped pbo thin film
 
Description The effect of Sn doping on the photoactivity of anodized Pb-Sn alloy electrodes is discussed. The Butler-Garmer model has been applied to understand the reasons for getting the highest photocurrent with pure lead oxide and the next highest photocurrent with a Pb-Sn alloy oxide containing 0.1 wt.% Sn. The low photoresponse of Sn doped lead oxide is attributed to creation of a small space charge width (5600 Angstrom) compared to the large penetration depth (97,000 Angstrom) of the incident light.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-07-25T09:10:57Z
2011-12-26T12:50:29Z
2011-12-27T05:35:30Z
2011-07-25T09:10:57Z
2011-12-26T12:50:29Z
2011-12-27T05:35:30Z
1997
 
Type Article
 
Identifier SOLAR ENERGY MATERIALS AND SOLAR CELLS, 45(2), 141-149
0927-0248
http://dx.doi.org/10.1016/S0927-0248(96)00045-1
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6697
http://hdl.handle.net/10054/6697
 
Language en