Spectroscopy of silicon dioxide films grown under negative corona stress
DSpace at IIT Bombay
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Title |
Spectroscopy of silicon dioxide films grown under negative corona stress
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Creator |
PRASAD, I
CHANDORKAR, AN |
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Subject |
sio2-films
discharge relaxation deposition oxidation sio2 |
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Description |
Silicon dioxide films were grown in oxygen ambient under negative corona stress at low temperatures (400-450 degreesC). Fourier transform infrared spectra of these films show a peak at 935 cm(-1) along with the conventional transverse optic mode peaks around 1074, 800, and 456 cm(-1). A broad shoulder at 1150 cm(-1) was also observed. The extra peak is attributed to the presence of SiO42- ions and could be the outcome of incomplete oxidation at the surface. The films indicated properties similar to a fully relaxed thermally grown silicon dioxide film with a contradictory nature. The results of these experiments can be comprehensively explained only by assuming the presence of some mixed phase of SiO2. (C) 2003
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Publisher |
AMER INST PHYSICS
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Date |
2011-07-16T15:19:36Z
2011-12-26T12:49:50Z 2011-12-27T05:35:35Z 2011-07-16T15:19:36Z 2011-12-26T12:49:50Z 2011-12-27T05:35:35Z 2003 |
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Type |
Article
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Identifier |
JOURNAL OF APPLIED PHYSICS, 94(4), 2308-2310
0021-8979 http://dx.doi.org/10.1063/1.1593222 http://dspace.library.iitb.ac.in/xmlui/handle/10054/4461 http://hdl.handle.net/10054/4461 |
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Language |
en
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