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Spectroscopy of silicon dioxide films grown under negative corona stress

DSpace at IIT Bombay

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Field Value
 
Title Spectroscopy of silicon dioxide films grown under negative corona stress
 
Creator PRASAD, I
CHANDORKAR, AN
 
Subject sio2-films
discharge
relaxation
deposition
oxidation
sio2
 
Description Silicon dioxide films were grown in oxygen ambient under negative corona stress at low temperatures (400-450 degreesC). Fourier transform infrared spectra of these films show a peak at 935 cm(-1) along with the conventional transverse optic mode peaks around 1074, 800, and 456 cm(-1). A broad shoulder at 1150 cm(-1) was also observed. The extra peak is attributed to the presence of SiO42- ions and could be the outcome of incomplete oxidation at the surface. The films indicated properties similar to a fully relaxed thermally grown silicon dioxide film with a contradictory nature. The results of these experiments can be comprehensively explained only by assuming the presence of some mixed phase of SiO2. (C) 2003
 
Publisher AMER INST PHYSICS
 
Date 2011-07-16T15:19:36Z
2011-12-26T12:49:50Z
2011-12-27T05:35:35Z
2011-07-16T15:19:36Z
2011-12-26T12:49:50Z
2011-12-27T05:35:35Z
2003
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 94(4), 2308-2310
0021-8979
http://dx.doi.org/10.1063/1.1593222
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4461
http://hdl.handle.net/10054/4461
 
Language en