STACKING-FAULTS UNDER REOXIDIZED NITRIDED OXIDES
DSpace at IIT Bombay
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Title |
STACKING-FAULTS UNDER REOXIDIZED NITRIDED OXIDES
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Creator |
KOLACHINA, SK
LAL, R |
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Subject |
thermal nitridation
impurity diffusion silicon oxidation defects surface sio2 |
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Description |
Processing induced stacking faults below reoxidized nitrided oxides have been observed by electron beam induced current (EBIC) imaging and by secondary electron imaging after preferential etching. Comparative studies of stacking fault lengths with those of dry and nitrided oxides show that the growth rates of stacking faults are anomalously high during reoxidation. A large proportion of these stacking faults show electrical activity in EBIC images. This is reflected in the degradation of effective generation lifetimes as seen in transient capacitance measurements.
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Publisher |
AMER INST PHYSICS
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Date |
2011-07-16T15:42:04Z
2011-12-26T12:49:50Z 2011-12-27T05:35:35Z 2011-07-16T15:42:04Z 2011-12-26T12:49:50Z 2011-12-27T05:35:35Z 1992 |
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Type |
Article
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Identifier |
APPLIED PHYSICS LETTERS, 61(4), 438-440
0003-6951 http://dx.doi.org/10.1063/1.107907 http://dspace.library.iitb.ac.in/xmlui/handle/10054/4464 http://hdl.handle.net/10054/4464 |
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Language |
en
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