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STACKING-FAULTS UNDER REOXIDIZED NITRIDED OXIDES

DSpace at IIT Bombay

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Field Value
 
Title STACKING-FAULTS UNDER REOXIDIZED NITRIDED OXIDES
 
Creator KOLACHINA, SK
LAL, R
 
Subject thermal nitridation
impurity diffusion
silicon
oxidation
defects
surface
sio2
 
Description Processing induced stacking faults below reoxidized nitrided oxides have been observed by electron beam induced current (EBIC) imaging and by secondary electron imaging after preferential etching. Comparative studies of stacking fault lengths with those of dry and nitrided oxides show that the growth rates of stacking faults are anomalously high during reoxidation. A large proportion of these stacking faults show electrical activity in EBIC images. This is reflected in the degradation of effective generation lifetimes as seen in transient capacitance measurements.
 
Publisher AMER INST PHYSICS
 
Date 2011-07-16T15:42:04Z
2011-12-26T12:49:50Z
2011-12-27T05:35:35Z
2011-07-16T15:42:04Z
2011-12-26T12:49:50Z
2011-12-27T05:35:35Z
1992
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 61(4), 438-440
0003-6951
http://dx.doi.org/10.1063/1.107907
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4464
http://hdl.handle.net/10054/4464
 
Language en