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Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well

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Title Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well
 
Creator SINGH, SD
PORWAL, S
SHARMA, TK
RUSTAGI, KC
 
Subject molecular-beam epitaxy
quantized states
growth mode
gaas
photoluminescence
photoreflectance
monolayer
layers
semiconductors
spectroscopy
 
Description Temperature dependent photoluminescence and photoreflectance techniques are used to investigate the lowest excitonic transition of InAs ultrathin quantum well. It is shown that the temperature dependence of the lowest energy transition follows the band gap variation of GaAs barrier, which is well reproduced by calculated results based on the envelope function approximation with significant corrections due to strain and temperature dependences of the confinement potential. A redshift in photoluminescence peak energy compared to photoreflectance is observed at low temperatures. This is interpreted to show that the photoluminescence signal originates from the recombination of carriers occupying the band-tail states below the lowest critical point. (c) 2006
 
Publisher AMER INST PHYSICS
 
Date 2011-07-16T17:13:23Z
2011-12-26T12:49:52Z
2011-12-27T05:35:37Z
2011-07-16T17:13:23Z
2011-12-26T12:49:52Z
2011-12-27T05:35:37Z
2006
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 99(6), -
0021-8979
http://dx.doi.org/10.1063/1.2184431
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4476
http://hdl.handle.net/10054/4476
 
Language en