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THE NATURE OF THE HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICS

DSpace at IIT Bombay

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Field Value
 
Title THE NATURE OF THE HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICS
 
Creator MALLIK, A
VASI, J
CHANDORKAR, AN
 
Subject rapid-thermal nitridation
inversion layer mobility
silicon dioxide
mos devices
reoxidation
mosfets
sio2
injection
endurance
 
Description To find out the nature of hole traps in reoxidized nitrided oxide (RNO), a series of field and thermal detrapping experiments were performed following irradiation. It has been found that not only are the hole traps in RNO located near the gate-SiO2 interface instead of near the Si-SiO2 interface as in conventional dry oxides, but that the energy distribution of these traps is also quite different from that in conventional oxides. This indicates that the origin of the traps in RNO is different from that normally found in conventional oxides.
 
Publisher AMER INST PHYSICS
 
Date 2011-07-16T17:42:53Z
2011-12-26T12:49:52Z
2011-12-27T05:35:40Z
2011-07-16T17:42:53Z
2011-12-26T12:49:52Z
2011-12-27T05:35:40Z
1993
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 74(4), 2665-2668
0021-8979
http://dx.doi.org/10.1063/1.354658
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4481
http://hdl.handle.net/10054/4481
 
Language en