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Ion beam processing of oriented CuO films deposited on (100) YSZ by laser ablation

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Title Ion beam processing of oriented CuO films deposited on (100) YSZ by laser ablation
 
Creator LANKE, UD
VEDAWYAS, M
 
Subject cupric oxide
electrical-conductivity
raman-scattering
implantation
implantation
cupric oxide
oriented
laser ablation
activation energy
 
Description A systematic study of Ar ion implantation in cupric oxide films has been reported. Oriented CuO films were deposited by pulsed excimer laser ablation technique on (1 0 0) YSZ substrates. X-ray diffraction (XRD) spectra showed the highly oriented nature of the deposited CuO films. The films were subjected to ion bombardment for studies of damage formation, Implantations were carried out using 100 keV Arf over a dose range between 5 x 10(12) and 5 x 10(15) ions/cm(2). The as-deposited and ion beam processed samples were characterized by XRD technique and resistance versus temperature (R-T) measurements. The activation energies for electrical conduction were found from In [R] versus 1/T curves. Defects play an important role in the conduction mechanism in the implanted samples. The conductivity of the film increases, and the corresponding activation energy decreases with respect to the dose value. (C) 1999 .
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-07-25T09:37:41Z
2011-12-26T12:50:33Z
2011-12-27T05:35:55Z
2011-07-25T09:37:41Z
2011-12-26T12:50:33Z
2011-12-27T05:35:55Z
1999
 
Type Article
 
Identifier NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 155(1-2), 97-101
0168-583X
http://dx.doi.org/10.1016/S0168-583X(99)00229-3
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6701
http://hdl.handle.net/10054/6701
 
Language en