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On the Nature of Shunt Leakage in Amorphous Silicon p-i-n Solar Cells

DSpace at IIT Bombay

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Title On the Nature of Shunt Leakage in Amorphous Silicon p-i-n Solar Cells
 
Creator DONGAONKAR, S
KARTHIK, Y
WANG, DP
FREI, M
MAHAPATRA, S
ALAM, MA
 
Subject devices
amorphous silicon solar
dark current
shunt leakage
space-charge-limited (scl) current
 
Description In this letter, we investigate the nature of shunt leakage currents in large-area (on the order of square centimeters) thin-film a-Si: H p-i-n solar cells and show that it is characterized by following universal features: 1) voltage symmetry; 2) power-law voltage dependence; and 3) weak temperature dependence. The voltage symmetry offers a robust empirical method to isolate the diode current from measured "shunt-contaminated" forward dark IV. We find that space-charge-limited current provides the best qualitative explanation for the observed features of the shunt current. Finally, we discuss the possible physical origin of localized shunt paths in the light of experimental observations from literature.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T11:04:32Z
2011-12-26T12:53:21Z
2011-12-27T05:36:00Z
2011-08-01T11:04:32Z
2011-12-26T12:53:21Z
2011-12-27T05:36:00Z
2010
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 31(11), 1266-1268
0741-3106
http://dx.doi.org/10.1109/LED.2010.2064754
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8413
http://hdl.handle.net/10054/8413
 
Language en