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Photoluminescence Investigation of the Effects of Barrier Thickness and Monolayer Coverage on Properties of Bilayer InAs/GaAs Quantum Dots

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Title Photoluminescence Investigation of the Effects of Barrier Thickness and Monolayer Coverage on Properties of Bilayer InAs/GaAs Quantum Dots
 
Creator CHAKRABARTI, S
HALDER, N
SENGUPTA, S
CHARTHAD, J
GHOSH, S
STANLEY, CR
 
Subject 1.3 mu-m
infrared photodetectors
gaas
mbe
bilayer qd
photoluminescence
 
Description The optical properties of InAs/GaAs bi-layer quantum dots were investigated by photoluminescence (PL) measurements. We have studied the effects of the GaAs spacer thickness in between the dot layers and the monolayer coverage of the top quantum dot (QD) layer on the PL wavelengths and emission line-widths of the bi-layer QD samples grown at a low growth rate (0.028 ML/s). The samples showed multiple excited states for the top layer QDs suggesting the formation of large sized defect free islands in the top layer of the bilayer samples due to reduced growth rate. Also the samples were tuned to give peak emission close to similar to 1.3 mu m at room temperature and yielded an extremely narrow line-width of 16.8 meV at 25 K for lambda = 1.23 mu m.
 
Publisher AMER SCIENTIFIC PUBLISHERS
 
Date 2011-07-17T03:33:06Z
2011-12-26T12:50:05Z
2011-12-27T05:36:04Z
2011-07-17T03:33:06Z
2011-12-26T12:50:05Z
2011-12-27T05:36:04Z
2008
 
Type Article
 
Identifier JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 3(3), 277-280
1555-130X
http://dx.doi.org/10.1166/jno.2008.306
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4604
http://hdl.handle.net/10054/4604
 
Language en