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Tunability of Photoluminescence of InAs/GaAs Quantum Dots by Growth Pause Introduced Ripening

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Title Tunability of Photoluminescence of InAs/GaAs Quantum Dots by Growth Pause Introduced Ripening
 
Creator HALDER, N
CHAKRABARTI, S
STANLEY, CR
 
Subject molecular-beam epitaxy
room-temperature
inas
islands
lasers
gaas
inas/gaas quantum dots
photoluminescence
mbe
growth
 
Description The effect of dot ripening pause on self organized InAs/GaAs QD's grown by MBE at two different growth rates and the resulting tunability of emission properties were studied with the help of PL and AFM experiments. We found the evolution of larger coherent islands with dot-pause due to high surface mobility of the In adatoms at the growth temperature resulting in a redshift in the PL spectra. A small blue shift in the emission is observed in case of the islands grown at higher growth rate and being allowed to ripen for sufficient time due to In desorption at high growth temperature.
 
Publisher AMER SCIENTIFIC PUBLISHERS
 
Date 2011-07-17T04:15:15Z
2011-12-26T12:50:06Z
2011-12-27T05:36:06Z
2011-07-17T04:15:15Z
2011-12-26T12:50:06Z
2011-12-27T05:36:06Z
2008
 
Type Article
 
Identifier JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 8(12), 6232-6237
1533-4880
http://dx.doi.org/10.1166/jnn.2008.364
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4611
http://hdl.handle.net/10054/4611
 
Language en