Record Details

The Drift Response to a High-Electric-Field in Carbon Nanotubes

DSpace at IIT Bombay

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Title The Drift Response to a High-Electric-Field in Carbon Nanotubes
 
Creator VIDHI, R
TAN, MLP
SAXENA, T
HASHIM, AM
ARORA, VK
 
Subject low-dimensional nanostructures
ballistic mobility
effect transistors
nanoelectronic devices
graphene nanoribbons
saturation velocity
degradation
carbon nanotubes
cnt
carrier concentration
high-electric-field transport
intrinsic velocity
saturation velocity
 
Description The carrier statistics in carbon nanotubes (CNTs) with nonparabolic energy spectrum is studied in order to predict the ultimate (intrinsic) drift velocity as a function of temperature, concentration, and chirality. The extremely high mobilities in CNTs do not necessarily lead to higher saturation velocity that is limited to the intrinsic velocity calculated using Arora's formalism [V. K. Arora, Current Nanoscience 5, 227(2009)]. The ballistic nature of the mobility when CNT length is smaller than the scattering-limited mean free path is delineated. The results are of enormous importance in extracting carrier transport properties from a variety of experiments performed on CNTs.
 
Publisher BENTHAM SCIENCE PUBL LTD
 
Date 2011-07-19T00:15:32Z
2011-12-26T12:50:54Z
2011-12-27T05:37:06Z
2011-07-19T00:15:32Z
2011-12-26T12:50:54Z
2011-12-27T05:37:06Z
2010
 
Type Article
 
Identifier CURRENT NANOSCIENCE, 6(5), 492-495
1573-4137
http://dspace.library.iitb.ac.in/xmlui/handle/10054/5114
http://hdl.handle.net/10054/5114
 
Language en