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Optimization of gate leakage and NBTI for plasma-nitrided gate oxides by numerical and analytical models

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Title Optimization of gate leakage and NBTI for plasma-nitrided gate oxides by numerical and analytical models
 
Creator ISLAM, AE
GUPTA, G
AHMED, KZ
MAHAPATRA, S
ALAM, MA
 
Subject bias temperature instability
direct tunneling current
nitrogen concentration
semiconductor devices
comprehensive model
dielectrics
oxynitride
interface
degradation
dependence
gate leakage
negative-bias temperature instability (nbti)
optimization
plasma-oxynitride dielectric
quantum-mechanical (qm) effects
reaction-diffusion (r-d) model
 
Description Reduction in static-power dissipation (gate leakage) by using nitrided oxides comes at the expense of enhanced negative-bias temperature instability (NBTI). Therefore, determining the nitrogen content in gate oxides that can simultaneously optimize gate-leakage and NBTI degradation is a problem of significant technological relevance. In this paper, we experimentally and theoretically analyze wide range of gate-leakage and NBTI stress data from a variety of plasma-oxynitride gate dielectric devices to establish an optimization scheme for gate-leakage and NBTI degradation. Calculating electric fields and leakage current both numerically and using simple analytical expressions, we demonstrate a design diagram for arbitrary nitrogen concentration and effective oxide thickness that may be used for process and IC design.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T12:06:21Z
2011-12-26T12:53:22Z
2011-12-27T05:37:08Z
2011-08-01T12:06:21Z
2011-12-26T12:53:22Z
2011-12-27T05:37:08Z
2008
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 55(5), 1143-1152
0018-9383
http://dx.doi.org/10.1109/TED.2008.919545
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8426
http://hdl.handle.net/10054/8426
 
Language en