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Part I: Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS Devices

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Title Part I: Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS Devices
 
Creator SHRIVASTAVA, M
BAGHINI, MS
GOSSNER, H
RAO, VR
 
Subject circuit
field
esd
drain-extended mos (demos)
hot carrier
input/output
lightly doped drain mos (lddmos)
mixed signal
reduced surface field (resurf)
reliability
 
Description In this paper, the optimization issues of various drain-extended devices are discussed for input/output applications. Themixed-signal performance, impact of process variations, and gate oxide reliability of these devices are compared. Lightly doped drain MOS (LDDMOS) was found to have a moderate performance advantage as compared to shallow trench isolation (STI) and non-STI drain-extended MOS (DeMOS) devices. Non-STI DeMOS devices have improved circuit performance but suffer from the worst gate oxide reliability. Incorporating an STI region underneath the gate-drain overlap improves the gate oxide reliability, although it degrades the mixed-signal characteristics of the device. The single-halo nature of DeMOS devices has been shown to be effective in suppressing the short-channel effects.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T12:30:15Z
2011-12-26T12:53:22Z
2011-12-27T05:37:39Z
2011-08-01T12:30:15Z
2011-12-26T12:53:22Z
2011-12-27T05:37:39Z
2010
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(2), 448-457
0018-9383
http://dx.doi.org/10.1109/TED.2009.2036796
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8434
http://hdl.handle.net/10054/8434
 
Language en