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Effect of heavy doping in SnO2:F films

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Field Value
 
Title Effect of heavy doping in SnO2:F films
 
Creator AGASHE, C
MAJOR, SS
 
Subject optical-properties
 
Description Thin films of fluorine-doped tin dioxide (SnO2:F) were deposited by a spray pyrolysis technique on soda lime glass substrates. Structural a nd electronic transport properties of the films deposited with different doping levels of fluorine (zero to 350 at %) were investigated. X-ray diffraction technique and Hall effect measurements were used for this work. Growth rate of the films was considerably affected by doping, specially at higher doping levels. The films were polycrystalline and preferentially oriented along [200]. This preferred growth played a dominant role in determining the transport properties. Notably the charge carrier mobility was directly governed by this preferred growth. The electrical conductivity was totally governed by the carrier concentration. The respective changes in carrier concentration were used to suggest the site selection of the fluorine dopant in the SnO2 lattice.
 
Publisher CHAPMAN HALL LTD
 
Date 2011-07-19T15:02:02Z
2011-12-26T12:51:16Z
2011-12-27T05:37:49Z
2011-07-19T15:02:02Z
2011-12-26T12:51:16Z
2011-12-27T05:37:49Z
1996
 
Type Article
 
Identifier JOURNAL OF MATERIALS SCIENCE, 31(11), 2965-2969
0022-2461
http://dx.doi.org/10.1007/BF00356009
http://dspace.library.iitb.ac.in/xmlui/handle/10054/5337
http://hdl.handle.net/10054/5337
 
Language en