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Part II: On the Three-Dimensional Filamentation and Failure Modeling of STI Type DeNMOS Device Under Various ESD Conditions

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Title Part II: On the Three-Dimensional Filamentation and Failure Modeling of STI Type DeNMOS Device Under Various ESD Conditions
 
Creator SHRIVASTAVA, M
GOSSNER, H
BAGHINI, MS
RAO, VR
 
Subject base push-out
charge device model (cdm)
current filamentation
drain-enhanced metal-oxide-semiconductor (demos)
electrostatic discharge (esd)
human body model (hbm)
input-output (i/o)
kirk effect
laterally diffused metal-oxide-semiconductor (ldmos)
space charge build-up
thermal runaway
transient interferometric mapping (tim)
 
Description Time evolution of self-heating and current filamentation are discussed in this paper for shallow-trench-isolation (STI)-type drained-enhanced n-channel metal-oxide-semiconductor (DeNMOS) devices. A deeper insight toward regenerative n-p-n action and its impact over various phases of filamentation and the final thermal runaway is presented. A modified STI-type DeNMOS device is proposed in order to achieve an improvement (similar to 2x) in the failure threshold (I(T2)) and electrostatic discharge (ESD) window (V(T2)). The performance and filament behavior of the standard device under charge-device-model-like ESD conditions is also presented, which is further compared with the proposed modified device.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T12:47:06Z
2011-12-26T12:53:23Z
2011-12-27T05:37:57Z
2011-08-01T12:47:06Z
2011-12-26T12:53:23Z
2011-12-27T05:37:57Z
2010
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(9), 2243-2250
0018-9383
http://dx.doi.org/10.1109/TED.2010.2055278
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8437
http://hdl.handle.net/10054/8437
 
Language en