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Surface properties of electrodeposited a-Si:C:H:F thin films by x-ray photoelectron spectroscopy

DSpace at IIT Bombay

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Title Surface properties of electrodeposited a-Si:C:H:F thin films by x-ray photoelectron spectroscopy
 
Creator RAM, P
SINGH, J
RAMAMOHAN, TR
VENKATACHALAM, S
SUNDARSINGH, VP
 
Subject amorphous hydrogenated silicon
photoemission spectroscopy
glow-discharge
solar-cell
microstructure
efficiency
spectra
esca
 
Description Surface properties of amorphous silicon thin films containing hydrogen, flourine and carbon obtained from hydrofluosilicic acid and ethylene glycol using the electrodeposition method are reported as a function of current density and deposition time. The Si2p core level X-ray photoelectron spectra exhibited binding-energy shifts corresponding to SiFx (x = 1-4), SiC, Si-H and Si-O-2 type bond formations. The shifts in 1s spectra of fluorine, carbon x and oxygen confirmed the presence of fluorine, carbon and oxygen in bonded form. Theoretical binding-energy shifts calculated from Pauling's electronegativity values were in close agreement with the measured values. The relative concentration values of C/Si estimated in these films were found to be larger than those of F/Si and O/Si. The results were corroborated with infrared spectroscopy and scanning electron microscopy data.
 
Publisher CHAPMAN HALL LTD
 
Date 2011-07-20T06:59:36Z
2011-12-26T12:51:21Z
2011-12-27T05:37:58Z
2011-07-20T06:59:36Z
2011-12-26T12:51:21Z
2011-12-27T05:37:58Z
1997
 
Type Article
 
Identifier JOURNAL OF MATERIALS SCIENCE, 32(23), 6305-6310
0022-2461
http://dx.doi.org/10.1023/A:1018653631062
http://dspace.library.iitb.ac.in/xmlui/handle/10054/5387
http://hdl.handle.net/10054/5387
 
Language en