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Partial crystallization of HfO2 for Two-Bit/Four-Level SONOS-Type flash memory

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Title Partial crystallization of HfO2 for Two-Bit/Four-Level SONOS-Type flash memory
 
Creator ZHANG, G
SAMANTA, SK
SINGH, PK
MA, FJ
YOO, MT
ROH, Y
YOO, WJ
 
Subject charge
temperature
device
performance
storage
zro2
nrom
cell
flash memory
hfo2
partial crystallization
two-bit/four-level properties
 
Description The nonvolatile memory properties of the partially crystallized HfO2 charge storage layer are investigated using short-channel devices of gate length L-g down to 80 nm. Highly efficient two-bit and four-level device operation is demonstrated by channel hot electron injection programming and hot hole injection erasing for devices of L-g > 170 mn, although the reduction of the memory window is observed for devices of L-g < 170 nm. A memory window of 5.5 V, ten-year retention Of Vth clearance larger than 1.5 V between adjacent levels, endurance for 10(5) programming/erasing cycles, and immunity to programming disturbances are demonstrated. Flash memory with partially crystallized HfO2 shows a larger memory window than HfO2 nanodot memory, assisted by the enhanced electron capture efficiency of an amorphous HfO2 matrix, which is lacking in other types of reported nanodot memory. The scalability, programming speed, V-th control for two-bit and four-level operation, endurance, and retention are also improved, compared with NROM devices that use a Si3N4 trapping layer.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T12:56:56Z
2011-12-26T12:53:23Z
2011-12-27T05:37:59Z
2011-08-01T12:56:56Z
2011-12-26T12:53:23Z
2011-12-27T05:37:59Z
2007
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 54(12), 3177-3185
0018-9383
http://dx.doi.org/10.1109/TED.2007.908863
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8438
http://hdl.handle.net/10054/8438
 
Language en