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Performance and Reliability Study of Single-Layer and Dual-Layer Platinum Nanocrystal Flash Memory Devices Under NAND Operation

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Title Performance and Reliability Study of Single-Layer and Dual-Layer Platinum Nanocrystal Flash Memory Devices Under NAND Operation
 
Creator SINGH, PK
BISHT, G
AULUCK, K
SIVATHEJA, M
HOFMANN, R
SINGH, KK
MAHAPATRA, S
 
Subject design optimization
part ii
fabrication
al2o3
sonos
nc
cycling endurance
dual layer (dl)
flash memory
metal nanocrystals (nc)
reliability
retention
single layer (sl)
 
Description Memory window (MW) and the retention of single-layer (SL) and dual-layer (DL) platinum (Pt) nanocrystal (NC) devices are extensively studied before and after program/erase (P/E) cycling. DL devices show better charge storage capability and reliability over the SL devices. Up to 50% improvement in the stored charge is estimated in the DL device over SL when P/E is performed at equal field. Excellent high temperature and postcycling retention capabilities of SL and DL devices are shown. The impact of the interlayer film (ILF) thickness on the retention of the DL structure is reported. While SL devices show poor P/E cycling endurance, DL cycling is shown to meet the minimum requirements of the multilevel cell (MLC) operation.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T13:39:05Z
2011-12-26T12:53:23Z
2011-12-27T05:38:06Z
2011-08-01T13:39:05Z
2011-12-26T12:53:23Z
2011-12-27T05:38:06Z
2010
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(8), 1829-1837
0018-9383
http://dx.doi.org/10.1109/TED.2010.2050961
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8444
http://hdl.handle.net/10054/8444
 
Language en