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The analysis of carbon bonding environment in HWCVD deposited a-SiC : H films by XPS and Raman spectroscopy

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Title The analysis of carbon bonding environment in HWCVD deposited a-SiC : H films by XPS and Raman spectroscopy
 
Creator SWAIN, BP
 
Subject ray photoelectron-spectroscopy
chemical-vapor-deposition
hot-wire
thin-films
infrared-absorption
diamond nucleation
cmos technologies
c-h
alloys
photoemission
hwcvd
uv-vis spectroscopy
raman spectroscopy
xps
ftir
 
Description incorporation of carbon in a-Si:H network distorts the structural and enhances the optical band gap of HWCVD deposited a-SiC:H thin films. Besides C-C and C=C bonds, C-H and Si-C bonds are mainly responsible for increasing the band gap from 2.4 to 3.5 CV. The presence of Si, 0 and defect clusters of sp(2) carbon in the a-SiC:H matrix could indeed shift the diamond C(1s) peak position and broaden the FWHM of C(1s) peak. The C(1s) diamond peak is observed at 285.0eV. In this work, we try to analyze the a-SiC:H network with the variation of C,H, flow rate and the change in orbital behavior of sp(2) and sp(3) carbon in the presence of silicon and oxygen atom. (c) 2006
 
Publisher ELSEVIER SCIENCE SA
 
Date 2011-07-29T01:16:18Z
2011-12-26T12:47:41Z
2011-12-27T05:38:30Z
2011-07-29T01:16:18Z
2011-12-26T12:47:41Z
2011-12-27T05:38:30Z
2006
 
Type Article
 
Identifier SURFACE & COATINGS TECHNOLOGY, 201(3-4), 1589-1593
0257-8972
http://dx.doi.org/10.1016/j.surfcoat.2006.02.029
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7540
http://hdl.handle.net/10054/7540
 
Language en