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STUDY OF PROTON BINDING-SITES AT THE SILICON DIOXIDE-ELECTROLYTE INTERFACE WITH CONDUCTANCE SPECTROSCOPY

DSpace at IIT Bombay

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Title STUDY OF PROTON BINDING-SITES AT THE SILICON DIOXIDE-ELECTROLYTE INTERFACE WITH CONDUCTANCE SPECTROSCOPY
 
Creator MITRA, M
LAL, R
 
Subject impedance
 
Description The kinetics of trapping and detrapping of protons at surface sites on thermally grown SiO2 have been studied in detail. A Shockley-Read-Hall-type model has been used to model trapping and detrapping of protons at these sites which behave as traps with two levels. A small signal equivalent circuit is obtained. The model has been validated with extensive imittance measurements on electrolyte-oxide-semiconductor structures. From the conductance frequency measurements, the response time of these traps is of the order of a few milliseconds which would also be the intrinsic response time of ion sensitive field effect transistor. The approach is quite general and could be used for studying trapping-detrapping of ions or charged molecules at other electrolyte-insulator interfaces.
 
Publisher ELECTROCHEMICAL SOC INC
 
Date 2011-07-21T15:02:10Z
2011-12-26T12:52:03Z
2011-12-27T05:38:59Z
2011-07-21T15:02:10Z
2011-12-26T12:52:03Z
2011-12-27T05:38:59Z
1992
 
Type Article
 
Identifier JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 139(6), 1706-1714
0013-4651
http://dx.doi.org/10.1149/1.2069481
http://dspace.library.iitb.ac.in/xmlui/handle/10054/5901
http://hdl.handle.net/10054/5901
 
Language en