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The effect of single-halo doping on the low-frequency noise performance of deep submicrometer MOSFETs

DSpace at IIT Bombay

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Title The effect of single-halo doping on the low-frequency noise performance of deep submicrometer MOSFETs
 
Creator NARASIMHULU, K
SETTY, IV
RAO, VR
 
Subject analog device design
mos-transistors
cmos technology
low-frequency noise
normalized drain-current noise spectral density
single-halo (sh) devices
 
Description In this letter, the low-frequency noise performance of single-halo (SH) devices is reported, and the physical mechanisms are identified. Experimental results show that, at constant gate overdrive voltages, SH devices show reduced low-frequency noise levels compared to the conventional devices. However, under constant current bias conditions, the noise reduction is less substantial. Low-frequency noise dependence on channel length is also investigated for SH devices based on the electrical measurements and analytical calculations.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T17:57:36Z
2011-12-26T12:53:27Z
2011-12-27T05:39:12Z
2011-08-01T17:57:36Z
2011-12-26T12:53:27Z
2011-12-27T05:39:12Z
2006
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 27(12), 995-997
0741-3106
http://dx.doi.org/10.1109/LED.2006.886409
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8504
http://hdl.handle.net/10054/8504
 
Language en