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The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs: A study by ultrafast on-the-fly I-DLIN technique

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Title The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs: A study by ultrafast on-the-fly I-DLIN technique
 
Creator MAHETA, VD
OLSEN, C
AHMED, K
MAHAPATRA, S
 
Subject pmos nbti degradation
comprehensive model
trap generation
interface
dependence
recovery
stress
device degradation
hole trapping
interface traps
negative-bias temperature instability (nbti)
on-the-fly (otf) i-dlin
plasma oxynitride
p-mosfets
thermal oxynitride
 
Description Degradation of p-MOSFET parameters during negative-bias temperature instability (NBTI) stress is studied for different nitridation conditions of the silicon oxynitride (SiON) gate dielectric, using a recently developed ultrafast on-the-fly I-DLIN technique having 1-mu s resolution. It is shown that the degradation magnitude, as well as its time, temperature, and field dependence, is governed by nitrogen (N) density at the Si/SiON interface. The relative contribution of interface trap generation and hole trapping to overall degradation as varying interfacial N density is qualitatively discussed. Plasma oxynitride films having low interfacial N density show interface trap dominated degradation, whereas relative hole trapping contribution increases for thermal oxynitride films having high N density at the Si/SiON interface.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T18:03:13Z
2011-12-26T12:53:27Z
2011-12-27T05:39:13Z
2011-08-01T18:03:13Z
2011-12-26T12:53:27Z
2011-12-27T05:39:13Z
2008
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 55(7), 1630-1638
0018-9383
http://dx.doi.org/10.1109/TED.2008.923524
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8505
http://hdl.handle.net/10054/8505
 
Language en