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Tri-Level Resistive Switching in Metal-Nanocrystal-Based Al(2)O(3)/SiO(2) Gate Stack

DSpace at IIT Bombay

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Title Tri-Level Resistive Switching in Metal-Nanocrystal-Based Al(2)O(3)/SiO(2) Gate Stack
 
Creator CHEN, YN
PEY, KL
GOH, KEJ
LWIN, ZZ
SINGH, PK
MAHAPATRA, S
 
Subject memory
dielectric breakdown
metal nanocrystal (mnc)
percolation path
resistive switching
 
Description Tri-level resistive switching behavior was observed in an Al(2)O(3)/SiO(2) gate stack with Ru metal nanocrystals embedded in the Al(2)O(3) layer. The device was successfully switched among three resistance states (high, medium, and low) after a forming process using a simple electrical method. The resistance ratio of the high-resistance state to the low-resistance state is more than 10(3). The insulator-to-conductor (and vice versa) transition of the Al(2)O(3) and SiO(2) dielectric layers is elucidated by a physical model, which invokes oxygen ion (O(2-)) trapping/detrapping at the metal-oxide interfaces, as well as O(2-) transport and annihilation with the oxygen vacancies in the breakdown percolation path. The switching transition of each individual dielectric layer is found to be dependent on the polarity of the gate bias. This new understanding opens the prospect of metal-nanocrystalbased Al(2)O(3)/SiO(2) gate stacks for a resistive switching memory application.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T18:43:59Z
2011-12-26T12:53:27Z
2011-12-27T05:39:20Z
2011-08-01T18:43:59Z
2011-12-26T12:53:27Z
2011-12-27T05:39:20Z
2010
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(11), 3001-3005
0018-9383
http://dx.doi.org/10.1109/TED.2010.2070801
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8514
http://hdl.handle.net/10054/8514
 
Language en