Record Details

Structural and electrical properties of high dose nitrogen implanted tantalum

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Structural and electrical properties of high dose nitrogen implanted tantalum
 
Creator YADAV, AD
DUBEY, SK
GUPTA, GK
RAO, TKG
 
Subject chemical compounds
films
tantalum nitrides
ion-implantation
ftir
xrd
sheet resistance
dielectric constant
 
Description High purity tantalum foils were implanted with 20 keV molecular nitrogen ions at dose levels varying from 5 x 10(16) to 1 x 10(18) N-2(+) cm(-2). The Fourier Transform Infrared (FTIR) spectra of the implanted layers show the formation of tantalum nitrides of different structures depending on the total ion dose. The X-Ray Diffraction (XRD) studies show the formation of Ta2N and TaN0.8 at all doses and TaN at higher doses (5 x 10(17) to 1 x 10(18) N(2)(+)cm(-2)). The FTIR, XRD and electrical studies show sputter limited maximum nitride concentrations.
 
Publisher GORDON BREACH SCI PUBL LTD
 
Date 2011-07-31T05:35:07Z
2011-12-26T12:52:50Z
2011-12-27T05:39:46Z
2011-07-31T05:35:07Z
2011-12-26T12:52:50Z
2011-12-27T05:39:46Z
2000
 
Type Article
 
Identifier RADIATION EFFECTS AND DEFECTS IN SOLIDS, 153(1), 25-33
1042-0150
http://dx.doi.org/10.1080/10420150008211832
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7999
http://hdl.handle.net/10054/7999
 
Language en