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From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth

DSpace at IIT Bombay

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Title From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth
 
Creator CHAUDHARI, VA
SOLANKI, CS
 
Subject solar-cells
crystalline silicon
series resistance
modules
technology
point
 
Description Use of a solar cell in concentrator PV technology requires reduction in its series resistance in order to minimize the resistive power losses. The present paper discusses a methodology of reducing the series resistance of a commercial c-Si solar cell for concentrator applications, in the range of 2 to 10 suns. Step by step optimization of commercial cell in terms of grid geometry, junction depth, and electroplating of the front metal contacts is proposed. A model of resistance network of solar cell is developed and used for the optimization. Efficiency of unoptimized commercial cell at 10 suns drops by 30% of its 1 sun value corresponding to resistive power loss of about 42%. The optimized cell with grid optimization, junction optimization, electroplating, and junction optimized with electroplated contacts cell gives resistive power loss of 20%, 16%, 11%, and 8%, respectively. An efficiency gain of 3% at 10 suns for fully optimized cell is estimated.
 
Publisher HINDAWI PUBLISHING CORPORATION
 
Date 2011-07-31T07:16:47Z
2011-12-26T12:52:53Z
2011-12-27T05:39:50Z
2011-07-31T07:16:47Z
2011-12-26T12:52:53Z
2011-12-27T05:39:50Z
2009
 
Type Article
 
Identifier INTERNATIONAL JOURNAL OF PHOTOENERGY, (), -
1110-662X
http://dx.doi.org/10.1155/2009/827402
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8026
http://hdl.handle.net/10054/8026
 
Language en