Record Details

DEPOSITION AND PROPERTIES OF CADMIUM-OXIDE FILMS BY ACTIVATED REACTIVE EVAPORATION

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title DEPOSITION AND PROPERTIES OF CADMIUM-OXIDE FILMS BY ACTIVATED REACTIVE EVAPORATION
 
Creator PHATAK, G
LAL, R
 
Description Activated reactive evaporation (ARE) is a useful technique for the deposition of compound semiconductor films at low temperatures. High quality transparent and conducting oxides and hard coatings of transition metal compounds have been successfully deposited using this technique. However, owing largely to the complexity introduced by plasma, the microscopic deposition mechanism of the process is not yet fully understood. Based upon experimental data of cadmium oxide films deposited by ARE, it is proposed in this paper that the reaction forming CdO is heterogeneous. It is also found that the microscopic deposition process and thereby the structural and electrical properties of CdO films are primarily influenced by the chamber pressure and the substrate temperature. The oxygen percentage in the chamber is found to have comparatively less influence on film properties. The data demonstrate that film resistivities as low as 2 x 10(-4) OMEGA cm with about 85% transparency can be obtained using this technique.
 
Publisher ELSEVIER SCIENCE SA LAUSANNE
 
Date 2011-07-29T04:37:12Z
2011-12-26T12:48:28Z
2011-12-27T05:39:54Z
2011-07-29T04:37:12Z
2011-12-26T12:48:28Z
2011-12-27T05:39:54Z
1994
 
Type Article
 
Identifier THIN SOLID FILMS, 245(1-2), 17-26
0040-6090
http://dx.doi.org/10.1016/0040-6090(94)90871-0
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7590
http://hdl.handle.net/10054/7590
 
Language en