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Sputter deposition of gallium nitride films using a GaAs target

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Title Sputter deposition of gallium nitride films using a GaAs target
 
Creator ELKASHEF, N
SRINIVASA, RS
MAJOR, S
SABHARWAL, SC
MUTHE, KP
 
Subject iii-v nitride
optical-properties
beam epitaxy
thin-films
gan
growth
wurtzite
phase
blue
deposition process
nitrides
semiconductors
sputtering
 
Description GaAs was used as the target material for the deposition of GaN films by reactive sputtering. The films were grown at different compositions of the sputtering gas mixture (0-100% nitrogen in argon) at substrate temperatures of 450 and 550 degrees C. The films were studied using XRD and XPS techniques. Even a small quantity of nitrogen in the sputtering medium was found to prevent the formation of GaAs on the substrate. Films grown at 550 degrees C using 100% nitrogen as the sputtering-reactive gas were found to be single phase (0002) oriented hexagonal gallium nitride and revealed complete absence of arsenic. (C) 1998 Elsevier Science S.A. .
 
Publisher ELSEVIER SCIENCE SA
 
Date 2011-07-28T20:08:32Z
2011-12-26T12:47:20Z
2011-12-27T05:39:55Z
2011-07-28T20:08:32Z
2011-12-26T12:47:20Z
2011-12-27T05:39:55Z
1998
 
Type Article
 
Identifier THIN SOLID FILMS, 333(1-2), 9-12
0040-6090
http://dx.doi.org/10.1016/S0040-6090(98)00550-1
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7486
http://hdl.handle.net/10054/7486
 
Language en