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Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructures

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Title Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructures
 
Creator SENGUPTA, S
HALDER, N
CHAKRABARTI, S
HERRERA, M
BONDS, M
BROWNING, ND
 
Subject molecular-beam epitaxy
growth pause
ripening
inas/gaas quantum dots
mbe
 
Description Effect of growth pause or ripening time on structural and optical properties of self-assembled InAs/GaAs quantum dot (QD) heterostructures grown by solid state molecular beam epitaxy (MBE) technique with two different growth rates of InAs (0.032 MLs(-1) and 0.197 MLs(-1)) has been investigated. The QD heterostructures were grown at 520 degrees C with InAs monolayer coverage of 2.7 ML The results were explained on the basis of high angle annular dark field scanning transmission electron microscope (HAADF-STEM), scanning electron microscope (SEM) and photoluminescence (PL) measurements. Introduction of growth pause leads the QD system towards a thermodynamic equilibrium state which in turn makes interesting changes on the morphology of the samples. Coagulation of some smaller dots occurs because of ripening to produce evolved QDs and the dot density reduces with growth pause. (C) 2009
 
Publisher ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
 
Date 2011-07-12T20:31:08Z
2011-12-26T12:47:47Z
2011-12-27T05:40:02Z
2011-07-12T20:31:08Z
2011-12-26T12:47:47Z
2011-12-27T05:40:02Z
2009
 
Type Article
 
Identifier SUPERLATTICES AND MICROSTRUCTURES, 46(4), 611-617
0749-6036
http://dx.doi.org/10.1016/j.spmi.2009.06.002
http://dspace.library.iitb.ac.in/xmlui/handle/10054/3598
http://hdl.handle.net/10054/3598
 
Language en