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Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs

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Title Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs
 
Creator SUSEENDRAN, J
HALDER, N
CHAKRABARTI, S
MISHIMA, TD
STANLEY, CR
 
Subject 1300 nm
layer
islands
strain
emission
mbe
multilayer qds
rheed
xtem
 
Description We are reporting the growth of multilayer stacks of quantum dots (10 periods) with a combination capping of In(0.21)Al(0.21)Ga(0.58)As (30 angstrom) and GaAs (70-180 angstrom) grown by solid source molecular beam epitaxy (MBE). Reflection high energy electron diffraction (RHEED) has been used for the insitu monitoring of quantum dot (QD) formation in heterostructure samples. The samples were also characterized by other exsitu techniques like cross sectional transmission electron microscopy (XTEM) and photoluminescence measurements (PL). For a heterostructure sample with thin barrier thickness ( 100 angstrom of GaAs) showed good stacking of islands until the tenth layer. The thick GaAs layer overgrown on the InAlGaAs at 590 degrees C is believed to remove the surface modifications of the quaternary layer thereby creating a smoother surface front for the growth of subsequent QD layers. (C) 2009
 
Publisher ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
 
Date 2011-07-12T20:31:09Z
2011-12-26T12:47:47Z
2011-12-27T05:40:06Z
2011-07-12T20:31:09Z
2011-12-26T12:47:47Z
2011-12-27T05:40:06Z
2009
 
Type Article
 
Identifier SUPERLATTICES AND MICROSTRUCTURES, 46(6), 900-906
0749-6036
http://dx.doi.org/10.1016/j.spmi.2009.10.003
http://dspace.library.iitb.ac.in/xmlui/handle/10054/3601
http://hdl.handle.net/10054/3601
 
Language en