Record Details

1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks

DSpace at IIT Bombay

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Title 1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks
 
Creator MAGNONE, P
CRUPI, F
GIUSI, G
PACE, C
SIMOEN, E
CLAEYS, C
PANTISANO, L
MAJI, D
RAO, VR
SRINIVASAN, P
 
Subject low-frequency noise
mos-transistors
flicker noise
dielectrics
impact
behavior
nmosfets
mobility
defects
performance
drain noise
gate noise
high-k dielectric
mosfet
1/f noise
 
Description In this paper, we investigate the quality of MOSFET gate stacks where high-k materials are implemented as gate dielectrics. We evaluate both drain- and gate-current noises in order to obtain information about the defect content of the gate stack. We analyze how the overall quality of the gate stack depends on the kind of high-k material, on the interfacial layer thickness, on the kind of gate electrode material, on the strain engineering, and on the substrate type. This comprehensive study allows us to understand which issues need to be addressed in order to achieve improved quality of the gate stack from a 1/f noise point of view.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-07-31T15:36:59Z
2011-12-26T12:53:03Z
2011-12-27T05:40:09Z
2011-07-31T15:36:59Z
2011-12-26T12:53:03Z
2011-12-27T05:40:09Z
2009
 
Type Article
 
Identifier IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 9(2), 180-189
1530-4388
http://dx.doi.org/10.1109/TDMR.2009.2020406
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8158
http://hdl.handle.net/10054/8158
 
Language en