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A 2-DIMENSIONAL NUMERICAL-SIMULATION OF OXIDE CHARGE BUILDUP IN MOS-TRANSISTORS DUE TO RADIATION

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Title A 2-DIMENSIONAL NUMERICAL-SIMULATION OF OXIDE CHARGE BUILDUP IN MOS-TRANSISTORS DUE TO RADIATION
 
Creator VASUDEVAN, V
VASI, J
 
Subject hot-carrier
interface
mosfets
damage
 
Description We have developed a time-dependent two-dimensional simulator in order to simulate charge trapping in silicon dioxide due to radiation. The Poisson and continuity equations are solved both in the oxide and the semiconductor. In addition, in order to simulate charge trapping, trap rate equations using first-order trapping kinetics are solved in the oxide. This paper contains the numerical methods used in the simulation and results obtained using this simulator. One of the main results of this simulation is the presence of a lateral variation in the radiation-induced oxide charge in an MOS transistor irradiated with a drain bias.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-07-31T15:39:48Z
2011-12-26T12:53:04Z
2011-12-27T05:40:10Z
2011-07-31T15:39:48Z
2011-12-26T12:53:04Z
2011-12-27T05:40:10Z
1994
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 41(3), 383-390
0018-9383
http://dx.doi.org/10.1109/16.275224
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8159
http://hdl.handle.net/10054/8159
 
Language en