Record Details

A Comparative NBTI Study of HfO(2), HfSiO(x), and SiON p-MOSFETs Using UF-OTF I(DLIN) Technique

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title A Comparative NBTI Study of HfO(2), HfSiO(x), and SiON p-MOSFETs Using UF-OTF I(DLIN) Technique
 
Creator DEORA, S
MAHETA, VD
BERSUKER, G
OLSEN, C
AHMED, KZ
JAMMY, R
MAHAPATRA, S
 
Subject bias temperature instability
gate stacks
activation energy
field acceleration
high-k dielectric
hole trapping
interface traps
negative-bias temperature instability (nbti)
plasma oxynitride
p-mosfet
thermal oxynitride
time exponent
 
Description The time, temperature, and oxide-field dependence of negative-bias temperature instability is studied in HfO(2)/TiN, HfSiO(x)/TiN, and SiON/poly-Si p-MOSFETs using ultrafast on-the-fly I(DLIN) technique capable of providing measured degradation from very short (approximately microseconds) to long stress time. Similar to rapid thermal nitrided oxide (RTNO) SiON, HfO(2) devices show very high temperature-independent degradation at short (submilliseconds) stress time, not observed for plasma nitrided oxide (PNO) SiON and HfSiO(x) devices. HfSiO(x) shows lower overall degradation, higher long-time power-law exponent, field acceleration, and temperature activation as compared to HfO(2), which are similar to the differences between PNO and RTNO SiON devices, respectively. The difference between HfsiO(x) and HfO(2) can be attributed to differences in N density in the SiO(2) IL of these devices.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-07-31T15:59:27Z
2011-12-26T12:53:04Z
2011-12-27T05:40:11Z
2011-07-31T15:59:27Z
2011-12-26T12:53:04Z
2011-12-27T05:40:11Z
2009
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 30(2), 152-154
0741-3106
http://dx.doi.org/10.1109/LED.2008.2009235
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8162
http://hdl.handle.net/10054/8162
 
Language en